Structural and opto-electrical properties of nanocrystalline Cadmium Indium Selenide thin films and to study their effect of annealing

Abstract

Nanocrystalline Cadmium Indium Selenide thin film have been prepared for the first time by using a relatively simple chemical bath deposition technique at room temperature using Cadmium sulphate, Indium chloride, Tartaric acid, Hydrazine hydrate and Sodium selenosulphate in an aqueous alkaline medium. Various preparative conditions of thin film deposition are outlined. The films deposited at optimum preparative parameters are annealed at different temperatures. The as-deposited films those annealed at 100^o C and have been characterized by X-ray diffraction (XRD), Optical absorption and scanning electron microscopy (SEM). The as grown films were found to be transparent, uniform, well adherent and red in color. The XRD analysis of the as- deposited and annealed films shows the presence of polycrystalline nature in tetragonal crystal structure. Optical absorption study shows the presence of band gap for direct transition at 1.95 and 1.80 eV respectively, for the as-deposited and annealed films. SEM study indicated the presence of uniformly distributed grains over the surface of substrate for the as-deposited as well as annealed film